US Patent Issued to Hefei Reliance Memory on Sept. 30 for "Memory device having improved memory cell structures to prevent formation of voids therein" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,177, issued on Sept. 30, was assigned to Hefei Reliance Memory Ltd. (Hefei, China).

"Memory device having improved memory cell structures to prevent formation of voids therein" was invented by Takeki Ninomiya (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a memory cell comprising a bottom electrode, a top electrode, and a dielectric layer interposed between the bottom electrode and the top electrode. The bottom electrode has a first width W1. The top electrode has a top surface that has a second width W2 between two edges of the top surface. The memory cell has a first height H1 extending from a lower surface ...