US Patent Issued to HEFEI RELIANCE MEMORY on Oct. 7 for "Process technique for embedded memory" (Chinese, American Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,609, issued on Oct. 7, was assigned to HEFEI RELIANCE MEMORY Ltd. (Hefei, China).

"Process technique for embedded memory" was invented by Chao-Yang Chen (Hefei, China), Wen-Hsiung Chang (Hefei, China), Zezhi Chen (Hefei, China) and Zhichao Lu (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A single integrated circuit is provided, comprising a memory region and a non-memory region. The memory region comprises a first conductive structure, a memory element disposed upon the first conductive structure, and a first via disposed upon the memory element. The non-memory region comprises a second conductive structure, and a second via dispos...