US Patent Issued to Hefei Reliance Memory on June 10 for "Method of RRAM write ramping voltage in intervals" (California Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,587, issued on June 10, was assigned to Hefei Reliance Memory Ltd. (Hefei, China).

"Method of RRAM write ramping voltage in intervals" was invented by Brent Haukness (Monte Sereno, Calif.) and Zhichao Lu (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a resistive random access memory (RRAM) circuit and related method to limit current, or ramp voltage, applied to a source line or bitline of an RRAM array. The RRAM array has one or more source lines and one or more bitlines. A control circuit sets an RRAM cell to a low resistance state in a set operation, and resets the RRAM cell to a high resistance state in a reset oper...