US Patent Issued to HEFECHIP on Nov. 4 for "Semiconductor structure and forming method thereof" (Taiwanese, Singaporean, American, Chinese Inventors)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,699, issued on Nov. 4, was assigned to HEFECHIP CORPORATION LIMITED (Hong Kong).

"Semiconductor structure and forming method thereof" was invented by Liang Li (Singapore), Chunyu Wong (Clifton Park, N.Y.), John H Zhang (Altamont, N.Y.), Yanzun Li (Lagrangeville, N.Y.), Huang Liu (Mechanicville, N.Y.), Yuan Lung Lin (Zhubei, Taiwan), Haijiang Yuan (Shanghai) and Chung-Chiang Lin (Qonglin, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure and a method of forming it are disclosed by the present application. Deep trench capacitors are formed in a substrate, and fin contacts formed by upper portions of inner electrodes in the...