ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,461,450, issued on Nov. 4, was assigned to HEFECHIP CORPORATION LIMITED (Hong Kong).
"OPC modeling method" was invented by Yinuo Pan (Zhejiang, China), Yingfang Wang (Shanghai), Keeho Kim (Hartford, Conn.), Norman S. Chen (Ballston Spa, N.Y.) and Eric S. Parent (Ballston Spa, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "An OPC modeling method is disclosed, which includes: step S1: determining optical model parameters and resist model parameters; step S2: obtaining a plurality of parameter combinations by stochastically choosing values for the parameters; step S3: performing photolithography simulations and etching wafers and calculating RMS values...