US Patent Issued to Headway Technologies on Nov. 11 for "Recessed write gap material for enhanced bias current injection and maximizing aerial density capacity in perpendicular magnetic recording" (California Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,518, issued on Nov. 11, was assigned to Headway Technologies Inc. (Milpitas, Calif.).

"Recessed write gap material for enhanced bias current injection and maximizing aerial density capacity in perpendicular magnetic recording" was invented by Shehrin Sayed (Fremont, Calif.), Yue Liu (Fremont, Calif.), Wenyu Chen (San Jose, Calif.), Haowen Ren (Fremont, Calif.), Kowang Liu (Fremont, Calif.) and Yuhui Tang (Milpitas, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present embodiments relate to a magnetic write head structure that improves the maximum allowable bias current to maximize the current-assisted areal density capacity (ADC) gain in...