ALEXANDRIA, Va., March 26 -- United States Patent no. 12,261,040, issued on March 25, was assigned to HC Semitek (Zhejiang) Co. Ltd. (Zhejiang, China).
"Substrate stripping method and epitaxial wafer" was invented by Hongpo Hu (Zhejiang, China), Binzhong Dong (Jiangsu, China), Peng Li (Jiangsu, China) and Jiangbo Wang (Jiangsu, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A substrate stripping method and an epitaxial wafer, relating to the technical field of semiconductors. The method comprises: providing a substrate (1), the substrate (1) having a recess, and the recess being distributed on a first surface (1a) of the substrate (1); forming a hydrophilic layer (3) in the recess; forming, on the firs...