ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,416,095, issued on Sept. 16, was assigned to HANWHA SOLUTIONS Corp. (Seoul, South Korea) and HANWHA Corp. (Seoul, South Korea).
"Ingot growth apparatus" was invented by Young Min Lee (Seoul, South Korea), Kyung Seok Lee (Seoul, South Korea), Jin Sung Park (Seoul, South Korea) and Dong Woo Bae (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An ingot growth apparatus is disclosed. The ingot growth apparatus according to an embodiment of the present invention may comprise: a growth furnace having a main crucible which is disposed inside the growth furnace and in which molten silicon is held in order to grow an ingot; a susceptor formed ...