ALEXANDRIA, Va., June 25 -- United States Patent no. 12,338,542, issued on June 24, was assigned to HANWHA SOLUTIONS Corp. (Seoul, South Korea) and HANWHA Corp. (Seoul, South Korea).
"Ingot growing apparatus" was invented by Dong Woo Bae (Seoul, South Korea), Kyung Seok Lee (Seoul, South Korea) and Young Min Lee (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "An ingot growing apparatus is disclosed. An ingot growing apparatus according to an embodiment of the present invention comprises: a growth furnace in which a main crucible for receiving molten silicon in order to grow an ingot is disposed; a susceptor formed so as to surround the outer surface of the main crucible and including a plu...