ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,492,486, issued on Dec. 9, was assigned to HANWHA SOLUTIONS Corp. (Seoul, South Korea) and Hanwha Corp. (Seoul, South Korea).

"Ingot growing apparatus comprising heater and method for manufacturing heater for ingot growing apparatus" was invented by Han Woong Jeon (Seoul, South Korea), Kyung Seok Lee (Seoul, South Korea) and Young Jun Lee (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An ingot growing apparatus is disclosed. An ingot growing apparatus comprising a heater according to an aspect of the present invention may comprise: a crucible for accommodating molten silicon; a growth furnace having an inner space in which the crucibl...