ALEXANDRIA, Va., July 16 -- United States Patent no. 12,359,317, issued on July 15, was assigned to HANSOL CHEMICAL Co. LTD. (Seoul, South Korea).

"Rare earth precursor, method of preparing the same, and method of forming thin film using the same" was invented by Mi-Ra Park (Jeollabuk-do, South Korea), Kyu-Hyun Yeom (Jeollabuk-do, South Korea), Hyun-Kyung Lee (Jeollabuk-do, South Korea), Jang-Hyun Seok (Sejong-si, South Korea) and Jung-Woo Park (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a compound capable of implementing thin film deposition through vapor deposition, and more particularly, to a rare earth compound which is applicable to atomic layer d...