US Patent Issued to Hangzhou Silicon-Magic Semiconductor Technology on May 20 for "Super-junction VDMOS device with low on-resistance" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,053, issued on May 20, was assigned to Hangzhou Silicon-Magic Semiconductor Technology Co. Ltd (Hangzhou, China).

"Super-junction VDMOS device with low on-resistance" was invented by Lvqiang Li (Hangzhou, China) and Hui Chen (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A super-junction VDMOS device with a low on-resistance includes: a super-junction structure disposed on a drain region; a super-junction structure having a first semiconductor pillar and a second semiconductor pillar. A HEMT structure having heterojunctions is formed between the first semiconductor pillar and the second semiconductor pillar. The HEMT structure inclu...