US Patent Issued to HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY on May 20 for "Silicon carbide MOSFET device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,042, issued on May 20, was assigned to HANGZHOU SILICON-MAGIC SEMICONDUCTOR TECHNOLOGY Co. LTD. (Hangzhou, China).

"Silicon carbide MOSFET device and manufacturing method thereof" was invented by Jiakun Wang (Hangzhou, China) and Hui Chen (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed a silicon carbide MOSFET device and manufacturing method thereof. The method includes: forming a patterned first barrier layer on an upper surface of the substrate; forming a base region of a second doping type extending from the upper surface to an inside of the substrate through oblique implantation in a first ion implantation process by us...