US Patent Issued to Hangzhou Silicon-Magic Semiconductor Technology on Jan. 27 for "Trench-type power device and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,563, issued on Jan. 27, was assigned to Hangzhou Silicon-Magic Semiconductor Technology Co. Ltd. (Hangzhou, China).

"Trench-type power device and manufacturing method thereof" was invented by Xiao Yang (Hangzhou, China), Hui Chen (Hangzhou, China) and Jiakun Wang (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a trench-type power device and a manufacturing method thereof. The trench-type power device comprises: a semiconductor substrate; a drift region located on the semiconductor substrate; a first trench and a second trench located in the drift region; a gate stack located in the first trench; and Schottky metal locate...