US Patent Issued to Hangzhou Silicon-Magic Semiconductor Technology on Jan. 27 for "Silicon carbide MOSFET device and manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,538,723, issued on Jan. 27, was assigned to Hangzhou Silicon-Magic Semiconductor Technology Co. Ltd. (Hangzhou, China).

"Silicon carbide MOSFET device and manufacturing method thereof" was invented by Hui Chen (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a silicon carbide MOSFET device and a manufacturing method thereof. The manufacturing method comprises: forming a source region in an epitaxial layer; forming a body region in the epitaxial layer; forming a gate structure, comprising a gate dielectric layer, a gate conductor layer and an interlayer dielectric layer; forming an opening in the interlayer dielectric layer to...