US Patent Issued to Hangzhou Silicon-Magic Semiconductor Technology on Aug. 5 for "Method for manufacturing trench MOSFET" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,659, issued on Aug. 5, was assigned to Hangzhou Silicon-Magic Semiconductor Technology Co. Ltd. (Hangzhou, China).

"Method for manufacturing trench MOSFET" was invented by Jinyong Cai (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a trench MOSFET includes: forming a trench extending from an upper surface of an epitaxial layer of a first dopant type into the epitaxial layer; forming a gate dielectric layer and a gate conductor located in the trench; forming a body region of a second dopant type located in the epitaxial layer, where the body region is adjacent to the trench; forming a source region of the fir...