US Patent Issued to HANGZHOU SILAN MICROELECTRONICS on Jan. 20 for "Bidirectional power device and method for manufacturing the same" (Chinese Inventor)

ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,532,527, issued on Jan. 20, was assigned to HANGZHOU SILAN MICROELECTRONICS Co. LTD. (Hangzhou, China).

"Bidirectional power device and method for manufacturing the same" was invented by Shaohua Zhang (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a bidirectional power device and a method for manufacturing the same. The bidirectional power device includes a semiconductor layer, a plurality of trenches located in the semiconductor layer, a gate dielectric layer located on an inner wall of each of the plurality of trenches, a control gate located at a lower portion of each of the plurality of trenches, a shield gate located ...