US Patent Issued to Hangzhou Sappland Microelectronics Technology on Jan. 13 for "Surface acoustic wave resonator and manufacturing method therefor" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,947, issued on Jan. 13, was assigned to Hangzhou Sappland Microelectronics Technology Co. LTD. (Hangzhou, China).

"Surface acoustic wave resonator and manufacturing method therefor" was invented by Genlin Zheng (Hangzhou, China) and Shumin Zhang (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A surface acoustic wave resonator and a manufacturing method thereof are provided. The surface acoustic wave resonator includes a piezoelectric substrate, an interdigital transducer located on a surface of the piezoelectric substrate, and a suppression layer for suppressing a transverse mode arranged on at least one of the piezoelectric substrat...