ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,735, issued on Feb. 10, was assigned to HangZhou HFC semiconductor Corp. (Hangzhou, China).
"Semiconductor chip having a crack-stop ring structure" was invented by Zhuojie Wu (Shanghai).
According to the abstract* released by the U.S. Patent & Trademark Office: "The invention discloses a semiconductor chip, which includes: a transistor region; and a crack-stop ring structure, which is arranged around the transistor region, wherein the crack-stop ring structure includes a peripheral crack-stop structure surrounding the transistor region along four sides of the semiconductor chip. The corner crack-stop structure is provided only at the corner of the semiconductor chip. The correspo...