US Patent Issued to HANGZHOU FULLSEMI SEMICONDUCTOR on Oct. 7 for "MOS device with sandwich structure and groove" (Chinese Inventor)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,439,652, issued on Oct. 7, was assigned to HANGZHOU FULLSEMI SEMICONDUCTOR Co. LTD. (Hangzhou, China).

"MOS device with sandwich structure and groove" was invented by Qi Yu (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a MOS device includes: providing a substrate having a source region and a drain region; forming a sandwich structure on the substrate, which includes a first SiO2 layer, a high-k dielectric layer, and a second SiO2 layer stacked sequentially from bottom up; forming a groove in the sandwich structure between the source region and the drain region, the depth of the groove extends from a top surface...