US Patent Issued to HANGZHOU CITY UNIVERSITY on Feb. 18 for "Plasma reactor having array of coaxial multiple pins and processing low temperature plasma at high efficiency" (Chinese Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,481, issued on Feb. 18, was assigned to HANGZHOU CITY UNIVERSITY (Hangzhou, China).

"Plasma reactor having array of coaxial multiple pins and processing low temperature plasma at high efficiency" was invented by Qi Qiu (Hangzhou, China), Pengfei Wang (Hangzhou, China), Jiahong Fu (Hangzhou, China), Xingliang Liu (Hangzhou, China) and Zhaozhe Deng (Hangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A plasma reactor, configured to process low temperature plasma, includes: a rotating reactor, a fixed reactor, and a master tube. An end of the master tube is connected to two branched tubes, one of the two branched tubes is connected to the ro...