US Patent Issued to HAMAMATSU PHOTONICS on Jan. 28 for "Method for inspecting semiconductor and semiconductor inspecting device" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,199, issued on Jan. 28, was assigned to HAMAMATSU PHOTONICS K.K. (Hamamatsu, Japan).

"Method for inspecting semiconductor and semiconductor inspecting device" was invented by Tomochika Takeshima (Hamamatsu, Japan), Takafumi Higuchi (Hamamatsu, Japan) and Kazuhiro Hotta (Hamamatsu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor inspection method by an observation system includes a step of acquiring a first pattern image showing a pattern of a semiconductor device, a step of acquiring a second pattern image showing a pattern of the semiconductor device and having a different resolution from a resolution of the first pattern image...