ALEXANDRIA, Va., Jan. 20 -- United States Patent no. 12,531,388, issued on Jan. 20, was assigned to HAMAMATSU PHOTONICS K.K. (Hamamatsu, Japan).
"Semiconductor laser device" was invented by Takahide Ochiai (Hamamatsu, Japan), Naota Akikusa (Hamamatsu, Japan), Kousuke Shibata (Hamamatsu, Japan) and Nobutaka Suzuki (Hamamatsu, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A quantum cascade laser device includes a QCL element and a package. A light-emitting window through which laser light emitted from the QCL element passes is provided on a side wall of the package. The light-emitting window includes a small-diameter hole, a large-diameter hole larger than the small-diameter hole, a counterbore surface ...