ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,401, issued on Feb. 3, was assigned to HAMAMATSU PHOTONICS K.K. (Hamamatsu, Japan).
"Photodetector" was invented by Wei Dong (Hamamatsu, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A photodetector includes: a first conductive type semiconductor layer; a semiconductor light absorption layer provided on the first conductive type semiconductor layer; a scatterer that is provided with a width equal to or less than a wavelength of incident light so as to be in contact with the semiconductor light absorption layer and forms a localized non-uniform electric field inside the semiconductor light absorption layer by scattering the incident light; a se...