US Patent Issued to HAMAMATSU PHOTONICS on Dec. 30 for "Semiconductor failure analysis device and semiconductor failure analysis method" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,510,591, issued on Dec. 30, was assigned to HAMAMATSU PHOTONICS K.K. (Hamamatsu, Japan).

"Semiconductor failure analysis device and semiconductor failure analysis method" was invented by Masataka Ikesu (Hamamatsu, Japan) and Tomonori Nakamura (Hamamatsu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor failure analysis device includes a first analysis unit that emits first irradiation light along a first path set on a first main surface of a semiconductor device, a second analysis unit that emits second irradiation light along a second path set on a second main surface that is a back side of the first main surface, an electric signal...