US Patent Issued to HAMAMATSU PHOTONICS on Dec. 2 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,988, issued on Dec. 2, was assigned to HAMAMATSU PHOTONICS K.K. (Shizuoka, Japan).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Wei Dong (Hamamatsu, Japan) and Kazuyoshi Hirose (Hamamatsu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided is a semiconductor device including: a semiconductor layer having an uneven structure configured to include a recessed portion on one surface side thereof; a first electrode film (first deposited film) provided on the one surface of the semiconductor layer; and a second electrode film (second deposited film) provided on a bottom surface of the recessed portion,...