US Patent Issued to HAMAMATSU PHOTONICS on April 8 for "Method for manufacturing back surface incident type semiconductor photo detection element" (Japanese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,701, issued on April 8, was assigned to HAMAMATSU PHOTONICS K.K. (Hamamatsu, Japan).

"Method for manufacturing back surface incident type semiconductor photo detection element" was invented by Tomoya Taguchi (Hamamatsu, Japan), Yuki Yoshida (Hamamatsu, Japan) and Katsumi Shibayama (Hamamatsu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor substrate including a first main surface and a second main surface opposing each other is provided. The semiconductor substrate includes a first semiconductor region of a first conductivity type. The semiconductor substrate includes a plurality of planned regions where a plurality of second se...