US Patent Issued to HAMAMATSU PHOTONICS on April 22 for "Light detection device with a plurality of avalanche photodiodes and MOS switch circuits" (Japanese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,281,938, issued on April 22, was assigned to HAMAMATSU PHOTONICS K.K. (Hamamatsu, Japan).

"Light detection device with a plurality of avalanche photodiodes and MOS switch circuits" was invented by Shinya Iwashina (Hamamatsu, Japan), Terumasa Nagano (Hamamatsu, Japan), Masanori Okada (Hamamatsu, Japan), Shunsuke Adachi (Hamamatsu, Japan) and Takuya Fujita (Hamamatsu, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a light detection device, each pixel includes a plurality of APDs. Each APD forms a light receiving region and is configured to operate in a Geiger mode. The plurality of APDs forms a plurality of light receiving regions arranged in a di...