US Patent Issued to Halo Microelectronics on March 18 for "Transistors, method for making the same, electrostatic discharge protection circuit, and electronic device" (Chinese, American Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,256,572, issued on March 18, was assigned to Halo Microelectronics Co. Ltd (Foshan, China).

"Transistors, method for making the same, electrostatic discharge protection circuit, and electronic device" was invented by Lijie Zhao (Foshan, China) and Suming Lai (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a transistor, a method for configuring the same, an electrostatic discharge (ESD) protection circuit, and an electronic device for ESD protection. The transistor comprises a P-type well, a body terminal region, a source region, and a metal silicide layer. The body terminal region and the source region are disp...