US Patent Issued to Halo Microelectronics International on Sept. 23 for "Latch-up free high voltage device" (California, Texas Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,362, issued on Sept. 23, was assigned to Halo Microelectronics International (Campbell, Calif.).

"Latch-up free high voltage device" was invented by Lijie Zhao (San Jose, Calif.), Kenneth Chung-Yin Kwok (Irvine, Calif.), Suming Lai (San Diego) and Zhao Fang (Plano, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus includes a first drain/source region and a second drain/source region surrounded by an isolation ring formed over a substrate, the isolation ring formed being configured to be floating, and a first diode connected between the substrate and the isolation ring, wherein the first diode is a Schottky diode."

The patent was fi...