US Patent Issued to Guangzhou Fermion Technology on Jan. 13 for "Compound as voltage-gated sodium channel inhibitor" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,521,399, issued on Jan. 13, was assigned to Guangzhou Fermion Technology Co. Ltd. (Guangzhou, China).

"Compound as voltage-gated sodium channel inhibitor" was invented by Daiguo Deng (Guangzhou, China), Wenhe Zhong (Guangzhou, China), Jielian Lu (Guangzhou, China) and Zengrong Lei (Guangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a compound as a voltage-gated sodium channel inhibitor, a preparation method therefor, a pharmaceutical composition thereof, and a use thereof. The compound has the structural characteristics of formula (I)."

The patent was filed on March 14, 2025, under Application No. 19/080,373.

*For further inf...