US Patent Issued to Guangzhou Anhi Semiconductor on Nov. 11 for "Trench type silicon carbide MOSFET structure and preparation method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,471,338, issued on Nov. 11, was assigned to Guangzhou Anhi Semiconductor Co. Ltd. (Guangzhou, China).

"Trench type silicon carbide MOSFET structure and preparation method thereof" was invented by Xin Huang (Guangzhou, China) and Hongbo Gao (Guangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A trench type silicon carbide MOSFET structure and a preparation method thereof. The trench type silicon carbide MOSFET structure comprises a trench gate region. The trench gate region comprises at least one first PN junction formed by doping; and at least one second PN junction formed by doping, wherein the second PN junction is juxtaposed and oppositel...