US Patent Issued to GUANGDONG ZHINENG TECHNOLOGY on Sept. 30 for "Device formed by epitaxial growth from the side surface of a step" (Chinese Inventor)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,958, issued on Sept. 30, was assigned to GUANGDONG ZHINENG TECHNOLOGY Co. LTD. (Guangdong, China).

"Device formed by epitaxial growth from the side surface of a step" was invented by Zilan Li (Guangdong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a semiconductor device and a method for manufacturing same. The device comprises: a substrate, a first insulating layer on the substrate, a plurality of trenches formed in the substrate, a nucleation layer arranged on one side wall of each trench, and a first semiconductor layer formed along the trenches by means of the nucleation layer. The present disclosure facilitates the achieve...