US Patent Issued to GUANGDONG ZHINENG TECHNOLOGY on July 29 for "Non-planar two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) including epitaxially growing an n-type buried layer between first channel and second channel and a method of forming the same" (Chinese Inventor)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,324, issued on July 29, was assigned to GUANGDONG ZHINENG TECHNOLOGY Co. LTD. (Guangdong, China).

"Non-planar two-dimensional electron gas (2DEG) or two-dimensional hole gas (2DHG) including epitaxially growing an n-type buried layer between first channel and second channel and a method of forming the same" was invented by Zilan Li (Guangdong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a non-planar hole channel transistor and a fabrication method thereof. The non-planar hole channel transistor has a substrate, and a surface of the substrate has a step structure comprising a vertical surface. A non-planar cha...