US Patent Issued to GUANGDONG ZHINENG TECHNOLOGY on July 1 for "Semiconductor device that comprises an HEMT and an HHMT with a backside contact electrode and the manufacturing method thereof" (Chinese Inventor)

ALEXANDRIA, Va., July 3 -- United States Patent no. 12,349,387, issued on July 1, was assigned to GUANGDONG ZHINENG TECHNOLOGY Co. LTD. (Guangdong, China).

"Semiconductor device that comprises an HEMT and an HHMT with a backside contact electrode and the manufacturing method thereof" was invented by Zilan Li (Guangzhou, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, a groove formed on the substrate, a channel layer structure grown under restriction of the groove structure, the channel layer structure being exposed from an upper surface of the substrate; a barrier lay...