ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,084, issued on April 8, was assigned to GUANGDONG ZHINENG TECHNOLOGY Co. LTD. (Guangdong, China).

"Normally-closed device and fabrication method thereof" was invented by Zilan Li (Guangdong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A normally-closed device and a fabrication method thereof, relating to the technical field of semiconductors, is disclosed. The normally-closed device comprises a substrate, an epitaxial layer connected to the substrate comprising a first P-type nitride layer and a modified layer located on two sides of the first P-type nitride layer and formed by modifying a second P-type nitride layer in a preset region, whe...