US Patent Issued to GUANGDONG ZHINENG TECHNOLOGIES on Nov. 4 for "High electron mobility transistor (HEMT) and method of manufacturing the same" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,464,756, issued on Nov. 4, was assigned to GUANGDONG ZHINENG TECHNOLOGIES Co. LTD. (Guangdong, China).

"High electron mobility transistor (HEMT) and method of manufacturing the same" was invented by Zilan Li (Guangdong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a HEMT, which comprises a vertical interface; a channel layer disposed outside of the vertical interface; a channel supply layer disposed outside of the channel layer, wherein a vertical 2 DEG is formed in the channel layer adjacent to an interface between the channel layer and the channel supply layer; a first electrode configured to be electrically co...