US Patent Issued to GUANGDONG ZHINENG TECHNOLOGIES on May 13 for "Semiconductor device and method of manufacturing the same" (Chinese Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,302,598, issued on May 13, was assigned to GUANGDONG ZHINENG TECHNOLOGIES Co. LTD. (Guangdong, China).

"Semiconductor device and method of manufacturing the same" was invented by Zilan Li (Guangdong, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a semiconductor device, comprising: a groove; a first channel layer positioned within the groove; and a first barrier layer positioned within the groove, wherein a first heterojunction having a vertical interface is included between the first channel layer and the first barrier layer and 2DEG or 2DHG is formed in the first heterojunction. The present disclosure also relat...