ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,441, issued on April 15, was assigned to GUANGDONG MIDEA WHITE HOME APPLIANCE TECHNOLOGY INNOVATION CENTER Co. LTD. (Foshan, China) and MIDEA GROUP Co. LTD. (Foshan, China).
"Insulated gate bipolar transistor, power module, and living appliance" was invented by Lishu Liu (Foshan, China) and Yuxiang Feng (Foshan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "An insulated gate bipolar transistor includes a semiconductor substrate, and the semiconductor substrate includes: a collector region doped in a first type, wherein the collector region includes a bump region; a first drift region doped in a second type and a second drift region doped in th...