ALEXANDRIA, Va., June 12 -- United States Patent no. 12,298,215, issued on May 13, was assigned to GRAPHWEAR TECHNOLOGIES INC. (San Francisco).
"Polar fluid gated field effect devices" was invented by Rajatesh Ravindra Gudibande (San Francisco), Saurabh Radhakrishnan (San Francisco), Antoine Galand (San Francisco) and Meet Vora (San Francisco).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are nanoscale field effect transistors (NFETs), e.g., graphene based field effect transistors (GFETs), that do not have physical gates. Instead, they are gated by polar fluids. Systems and methods using such transistors are also disclosed."
The patent was filed on Dec. 14, 2018, under Application No. 16/22...