US Patent Issued to GlobalWafers on Oct. 7 for "Methods for producing a single crystal silicon ingot using boric acid as a dopant" (American, Italian Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,435,440, issued on Oct. 7, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).

"Methods for producing a single crystal silicon ingot using boric acid as a dopant" was invented by William L. Luter (St. Charles, Mo.), Hariprasad Sreedharamurthy (Ballwin, Mo.), Stephan Haringer (Kastelbell/Tschars, Italy), Richard J. Phillips (St. Peters, Mo.), Nan Zhang (O'Fallon, Mo.) and Yu-Chiao Wu (Frontenac, Mo.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for producing a single crystal silicon ingot are disclosed. The ingot is doped with boron using solid-phase boric acid as the source of boron. Boric acid may be used to counter-dope the ingot during i...