ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,662, issued on Nov. 25, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).

"Systems and methods for producing epitaxial wafers" was invented by Chih-Yuan Hsu (Hsinchu, Taiwan), Chun-Chin Tu (Zhubei, Taiwan), Yau-Ching Yang (Hsinchu County, Taiwan) and Shih-Chiang Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of producing an epitaxial semiconductor wafer includes measuring one or more epitaxial semiconductor wafers to determine an epitaxial deposition layer profile produced by an epitaxy apparatus. The method also includes polishing a semiconductor wafer using a polishing assembly and measuring the polished semic...