US Patent Issued to GlobalWafers on Nov. 25 for "Semiconductor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,269, issued on Nov. 25, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure" was invented by Po Jung Lin (Hsinchu, Taiwan), Ying-Ru Shih (Hsinchu, Taiwan) and Chenghan Tsao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure, including a substrate, a first nitride layer, a polarity inversion layer, a second nitride layer, and a third nitride layer, is provided. The first nitride layer is located on the substrate. The polarity inversion layer is located on a surface of the first nitride layer to convert a non-metallic polarity surface of the first nitride layer into a metallic polari...