US Patent Issued to GlobalWafers on Nov. 11 for "Silicon carbide wafer and method of forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,466,019, issued on Nov. 11, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).

"Silicon carbide wafer and method of forming the same" was invented by Ching-Shan Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon carbide wafer having a seed end and a dome end opposite to the seed end. In the silicon carbide wafer, a basal plane dislocation (BPD) density detected by potassium hydroxide (KOH) etching is less than 550 pcs/cm2 at both the seed end and the dome end, and a basal plane dislocation (PL-BPD) density detected by photoluminescence is less than 2000 pcs/cm2 at both the seed end and the dome end."

The patent was file...