ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,467,877, issued on Nov. 11, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).
"Methods for detecting defects in a single crystal silicon structure" was invented by Armando Giannattasio (Lagundo, Italy), Fabrizio Nicolini (Merano, Italy), Silvana Zampieri (Merano, Italy), Maria Porrini (Merano, Italy) and Moreno Lorenzino Morici (Cameri, Italy).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for detecting defects in single crystal silicon structures doped with antimony, boron, arsenic or phosphorous are disclosed. The structure is immersed in an ultrasonic bath. The structure is contacted with a first etchant solution comprising nitric acid ...