ALEXANDRIA, Va., June 16 -- United States Patent no. 12,308,224, issued on May 20, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).
"Silicon carbide wafers and grinding method thereof" was invented by Chin Chen Chiu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for grinding a silicon carbide wafer includes the following steps. Firstly, a single crystal is sliced into several wafers, in which each wafer has a silicon-side surface, which is the first surface. The opposite side is a carbon-side surface, which is the second surface. Subsequently, the silicon-side of the wafer is faced down and placed on a grinding stage for performing a first grinding process. It should be note...