US Patent Issued to GlobalWafers on May 13 for "High resistivity silicon-on-insulator substrate comprising an isolation region" (Ohio, Missouri Inventors)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,535, issued on May 13, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).

"High resistivity silicon-on-insulator substrate comprising an isolation region" was invented by Igor Peidous (Liberty Township, Ohio) and Jeffrey L Libbert (O'Fallon, Mo.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A multilayer composite structure and a method of preparing a multilayer composite structure are provided. The multilayer composite structure comprises a semiconductor handle substrate having a minimum bulk region resistivity of at least about 500 ohm-cm and an isolation region that impedes the transfer of charge carriers along the surface of the handle sub...