US Patent Issued to GlobalWafers on July 8 for "Methods for producing a product ingot having low oxygen content" (South Korean, American Inventors)

ALEXANDRIA, Va., July 9 -- United States Patent no. 12,351,938, issued on July 8, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).

"Methods for producing a product ingot having low oxygen content" was invented by Carissima Marie Hudson (St. Charles, Mo.), JaeWoo Ryu (Chesterfield, Mo.) and HyungMin Lee (Cheonan-Si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for producing a product ingot from a silicon melt held within a crucible are disclosed. The methods involve evaluating one or more ingot puller apparatus to determine if the apparatus is capable of producing low oxygen content silicon product ingots. A sample rod is pulled from the silicon melt and the oxygen content of the...