US Patent Issued to GlobalWafers on Feb. 11 for "Systems and methods for controlling a gas dopant vaporization rate during a crystal growth process" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,221,718, issued on Feb. 11, was assigned to GlobalWafers Co. Ltd. (Hsinchu, Taiwan).

"Systems and methods for controlling a gas dopant vaporization rate during a crystal growth process" was invented by Chieh Hu (Chiayi, Taiwan), Hsien-Ta Tseng (Zhunan, Taiwan), Chun-Sheng Wu (Hsinchu, Taiwan), William Lynn Luter (St. Charles, Mo.), Liang-Chin Chen (Zhubei, Taiwan), Sumeet Bhagavat (St. Charles, Mo.), Carissima Marie Hudson (St. Charles, Mo.) and Yu-Chiao Wu (Frontenac, Mo.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of growing a single crystal ingot includes growing a single crystal silicon ingot from a silicon melt in a crucible within an i...