US Patent Issued to GlobalWafers on Aug. 26 for "Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,398,487, issued on Aug. 26, was assigned to GlobalWafers Co. Ltd (Hsinchu, Taiwan).

"Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size" was invented by Zheng Lu (O'Fallon, Mo.), Gaurab Samanta (St. Peters, Mo.), Tse-Wei Lu (Hsinchu, Taiwan) and Feng-Chien Tsai (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Nitrogen-doped CZ silicon crystal ingots and wafers sliced therefrom are disclosed that provide for post epitaxial thermally treated wafers having oxygen precipitate density and size that are substantially uniformly...